Sidense’s SiPROM memory cell consists of one specially designed FET as shown in the figure below. The special part of the FET’s design is a stepped gate-oxide layer with two thicknesses: thick and thin. Unprogrammed, the FET looks like a FET. Programming causes a controlled disruption in the thin part of the FET’s channel-oxide insulation to produce a conduction path from the FET’s gate to the conduction channel. Charge-coupled sense amps can detect whether or not an FET in the OTP array has or has not been programmed.

It’s because of the charge-coupled sense amps that Sidense’s SiPROM technology qualifies as a low-power memory technology. These sense amps are only on for tens of nanoseconds during a read cycle and are not powered continuously. This is a patented feature of Sidense’s technology.

Although designers have an obvious bias towards read/write technologies for on-chip memory, OTP memory can be quite useful for storing infrequently programmed or reprogrammed data such as calibration and trim settings, serial numbers, configurations, boot code, and security keys. This last application is particularly interesting. Lipman provided an example. The security keys for the HDMI digital display interface spec need about 2.5 kbits for storage. However, there’s the possibility that the security can be broken and that new keys will need to be distributed. A 16-kbit array of OTP memory can store about six sets of HDMI keys, which should be enough storage to last beyond the expected life of the end equipment.

You should also be aware of the factors that argue in favor of on-chip OTP memory. Sidense’s cells are about 1.2x larger than ROM cells, so there’s a 20% size penalty in exchange for the flexibility of programmability. In exchange for this size penalty, there’s no need for a mask change if the data stored in the OTP ROM needs to be changed in the factory or in the field (for an update).

In addition, Sidense’s OTP memory easily tracks IC manufacturing process changes although it’s hard IP, so Sidense must tailor the IP for each vendor’s process technology. Sidense’s SiPROM products are currently available from 180nm to 55nm and are portable to 40nm and below. Supported foundries include TSMC, UMC, Fujitsu Microelectronics, SMIC, Tower, IBM and Chartered.

It’s also interesting to compare OTP memory with Flash. Lipman says that Sidense’s OTP SiPROM cells are about half the size of Flash cells for a given semiconductor technology. In addition, the creation of Flash-cell floating gates adds process changes that can add roughly 30% to wafer production costs. Finally, Flash process technology is clearly getting into trouble as lithographies shrink. Some presenters at the recent Flash Memory Summit were predicting that the 22nm node might be the last node to support Flash memory, although such end-of-the-world prognostications from the semiconductor pundits are often wrong. By contrast, Sidense’s SiPROM cells require only standard CMOS processing, so the company claims it’s easier for their OTP memory than it is for Flash cells to track process improvements.