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Product News

ALD EPAD MOSFET ARRAYS INTRODUCE REVOLUTIONARY CONTROL OF INDEPENDENT DEVICES

Next-generation Zero-Threshold Voltage EPAD design enables circuits with greater operating range in low voltage supply environments

SUNNYVALE, Calif. – March 12, 2013 – Advanced Linear Devices Inc. (ALD) today announced an industry breakthrough in small signal, low power MOSFETs by enabling  independent control of each device within a quad package. This innovative capability will provide circuit designers with unprecedented flexibility in developing next-generation energy harvesting systems and low-power mobile devices.

The ALD210800A/ALD210800 Precision N-Channel MOSFET arrays featuring Zero-Threshold Voltage establish new industry benchmarks for forward transconductance and output conductance. Designed with ALD’s proven EPAD CMOS technology, the arrays allow circuit designers to build ultra-low supply voltages that were never before possible. The game-changing capabilities of the devices are enabled by the following features:

  • Zero Gate Threshold Voltage VGS(th) set precisely at +0.00V +/- 0.01V
  • VOS (VGS(th) match) to 2mV / 10mV max
  • Sub-threshold voltage or nano-power operations

The precision parameters of the device enable revolutionary abilities:

  • <100 mV Min. operating voltage
  • <1nA Min. operating current
  • <1nW Min. operating power

Circuit Design Impact
The independent control of each device in the package will transform circuit design by enabling each MOSFET to be characterized with different input and output requirements. This further reduces size and weight in systems by shrinking the footprint of discrete MOSFET circuits up to 50 percent, significantly decreasing board real estate, circuit board complexity, cost and time to market.

ALD210800A/ALD210800 Precision N-Channel MOSFET arrays can help designers reduce the number of batteries required for mobile devices. The game-changing flexibility of the devices is also suited for improving energy efficiency and battery life in medical devices, boosting audio quality in premium headphones and consumer devices, extending operating range for energy harvesting systems or enhancing sensitivity in sensor arrays among multiple other uses.

The ALD210800A/ALD210800 MOSFET arrays are designed to empower designers to build circuits with multiple cascading stages that operate at extremely low supply/bias voltage levels. It’s now possible to build a nanopower input amplifier stage operating at a <0.2V supply voltage – a new industry achievement.

“The latest generation of EPAD Zero-Threshold MOSFET enables designers to maintain low power and low voltage but increase current drive to allow a much wider range of sensors, transformers and other circuits that require higher operating load current,” said Robert Chao, President and CEO of ALD. “The ALD210800A/ALD210800 MOSFET arrays represent the state-of-the-art in precision device characteristics that will touch off a wave of innovative classes of circuits with operating parameters that were not possible before.”

Technology Features
As an enhanced addition to the family of ALD110800A/ALD110800 EPAD Matched Pair MOSFETs, the new ALD210800A/ALD210800 arrays feature the industry’s first Zero-ThresholdTM voltage to enable circuit designs with input/output signals referenced to GND at enhanced operating voltage ranges in ultra-low operating voltage environments. The MOSFETs are designed for exceptional device electrical characteristics matching with the Gate Threshold Voltage VGS(th) set precisely at +0.00V + /- 0.01V, IDS = +10µA @ VDS = 0.1V, featuring a typical offset voltage of only +/- 0.001V (1mV).

Additionally, the ALD210800A/ALD210800 MOSFETs are intended as versatile design components for a broad range of analog applications such as current mirrors, matching circuits, current sources, differential amplifier input stages, transmission gates, and multiplexers. They also excel in limited operating voltage applications such as very low level voltage-clamps and normally-on nanopower circuits.

Each individual MOSFET also exhibits tightly controlled manufacturing characteristics, delivering precise design limits from different production batches. They are built for minimum offset voltage and differential thermal response, and they can be used for switching and amplifying applications in +0.1V to +10V (+/- 0.05V to +/-5V) powered systems requiring low input bias current, low input capacitance, and fast switching speed. At VGS > 0.00V, the device exhibits enhancement mode characteristics. At VGS <0.00V the device operates in depletion mode.



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